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TI(德州仪器) LF147JAN
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  • TI(德州仪器) LF147JAN
  • TI(德州仪器) LF147JAN
  • TI(德州仪器) LF147JAN
  • TI(德州仪器) LF147JAN
  • TI(德州仪器) LF147JAN
  • TI(德州仪器) LF147JAN
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LF147JAN

LF147JAN

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军用级、四通道、30V、4MHz、FET 输入运算放大器

产品详情
  • 说明
  • 特性
  • 参数
  • 封装 | 引脚 | 尺寸

The LF147 is a low cost, high speed quad JFET input operational amplifier with an internally trimmed input offset voltage (BI-FET II technology). The device requires a low supply current and yet maintains a large gain bandwidth product and a fast slew rate. In addition, well matched high voltage JFET input devices provide very low input bias and offset currents. The LF147 is pin compatible with the standard LM148. This feature allows designers to immediately upgrade the overall performance of existing LF148 and LM124 designs.

The LF147 may be used in applications such as high speed integrators, fast D/A converters, sample-and-hold circuits and many other circuits requiring low input offset voltage, low input bias current, high input impedance, high slew rate and wide bandwidth. The device has low noise and offset voltage drift.

  • Internally Trimmed Offset Voltage: 5 mV Max
  • Low Input Bias Current: 50 pA Typ.
  • Low Input Noise Current: 0.01 pA/√Hz Typ.
  • Wide Gain Bandwidth: 4 MHz Typ.
  • High Slew Rate: 13 V/μs Typ.
  • Low Supply Current: 7.2 mA Typ.
  • High Input Impedance: 1012Ω Typ.
  • Low Total Harmonic Distortion:
    • AV = 10, RL = 10KΩ, VO = 20VP-P
    • BW = 20Hz — 20KHz ≤0.02% Typ.
  • Low 1/f Noise Corner: 50 Hz Typ.
  • Fast Settling Time to 0.01%: 2 μs Typ.

BI-FET is a trademark of Texas Instruments. All trademarks are the property of their respective owners.

Number of channels4
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V)44
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V)5
Rail-to-railNo
GBW (typ) (MHz)4
Slew rate (typ) (V/µs)13
Vos (offset voltage at 25°C) (max) (mV)5
Iq per channel (typ) (mA)1.8
Vn at 1 kHz (typ) (nV√Hz)20
RatingMilitary
Operating temperature range (°C)-55 to 125
Offset drift (typ) (µV/°C)30
Input bias current (max) (pA)200
CMRR (typ) (dB)100
Iout (typ) (A)0.03
ArchitectureFET
Input common mode headroom (to negative supply) (typ) (V)3
Input common mode headroom (to positive supply) (typ) (V)0
Output swing headroom (to negative supply) (typ) (V)1.5
Output swing headroom (to positive supply) (typ) (V)-1.5
CDIP (J)14130.4652 mm² 19.56 x 6.67
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