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LF356

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单通道、36V、5MHz、高压摆率 (12V/µs)、输入接近 V+、JFET 输入运算放大器

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The LFx5x devices are the first monolithic JFET input operational amplifiers to incorporate well-matched, high-voltage JFETs on the same chip with standard bipolar transistors (BI-FET™ Technology). These amplifiers feature low input bias and offset currents/low offset voltage and offset voltage drift, coupled with offset adjust, which does not degrade drift or common-mode rejection. The devices are also designed for high slew rate, wide bandwidth, extremely fast settling time, low voltage and current noise and a low 1/f noise corner.

Advantages
- Replace Expensive Hybrid and Module FET
  Op Amps
- Rugged JFETs Allow Blow-Out Free Handling
  Compared With MOSFET Input Devices
- Excellent for Low Noise Applications Using
  Either High or Low Source Impedance–Very
  Low 1/f Corner
- Offset Adjust Does Not Degrade Drift or
  Common-Mode Rejection as in Most
  Monolithic Amplifiers
- New Output Stage Allows Use of Large
  Capacitive Loads (5,000 pF) Without Stability
  Problems
- Internal Compensation and Large Differential
  Input Voltage Capability
Common Features
- Low Input Bias Current: 30 pA
- Low Input Offset Current: 3 pA
- High Input Impedance: 10¹² Ω
- Low Input Noise Current: 0.01 pA/√Hz
- High Common-Mode Rejection Ratio: 100 dB
- Large DC Voltage Gain: 106 dB
Uncommon Features
- Extremely Fast Settling Time to 0.01%:
  - 4 µs for the LFx55 devices
  - 1.5 µs for the LFx56
  - 1.5 µs for the LFx57 (A_V = 5)
- Fast Slew Rate:
  - 5 V/µs for the LFx55
  - 12 V/µs for the LFx56
  - 50 V/µs for the LFx57 (A_V = 5)
- Wide Gain Bandwidth:
  - 2.5 MHz for the LFx55 devices
  - 5 MHz for the LFx56
  - 20 MHz for the LFx57 (A_V = 5)
- Low Input Noise Voltage:
  - 20 nV/√Hz for the LFx55
  - 12 nV/√Hz for the LFx56
  - 12 nV/√Hz for the LFx57 (A_V = 5)

Number of channels	1
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V)	36
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V)	10
Rail-to-rail	In to V+
GBW (typ) (MHz)	5
Slew rate (typ) (V/µs)	12
Vos (offset voltage at 25°C) (max) (mV)	10
Iq per channel (typ) (mA)	5
Vn at 1 kHz (typ) (nV√Hz)	12
Rating	Catalog
Operating temperature range (°C)	0 to 70
Offset drift (typ) (µV/°C)	3
Input bias current (max) (pA)	8000
CMRR (typ) (dB)	100
Iout (typ) (A)	0.025
Architecture	FET
Input common mode headroom (to negative supply) (typ) (V)	3
Input common mode headroom (to positive supply) (typ) (V)	0.1
Output swing headroom (to negative supply) (typ) (V)	2
Output swing headroom (to positive supply) (typ) (V)	-2

PDIP (P)	8	92.5083 mm² 9.81 x 9.43
SOIC (D)	8	29.4 mm² 4.9 x 6

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LF356

单通道、36V、5MHz、高压摆率 (12V/µs)、输入接近 V+、JFET 输入运算放大器

4000-306-326