| Number of channels | 1 |
| Vs (max) (V) | 40 |
| Vs (min) (V) | 10 |
| Input offset (±) (max) (µV) | 25 |
| Voltage gain (min) (V/V) | 1 |
| Voltage gain (max) (V/V) | 1000 |
| Noise at 1 kHz (typ) (nV√Hz) | 13 |
| CMRR (min) (dB) | 106 |
| Input offset drift (±) (max) (V/°C) | 0.000002 |
| Input bias current (±) (max) (nA) | 20 |
| Iq (typ) (mA) | 6.7 |
| Bandwidth at min gain (typ) (MHz) | 0.3 |
| Gain error (±) (max) (%) | 0.3 |
| Operating temperature range (°C) | -55 to 125 |
| Rating | Catalog |
| Type | Resistor |
| Gain nonlinearity (±) (max) (%) | 0.002 |
| Output swing headroom (to negative supply) (typ) (V) | 2.5 |
| Output swing headroom (to positive supply) (typ) (V) | -2.5 |
| Input common mode headroom (to negative supply) (typ) (V) | 3 |
| Input common mode headroom (to positive supply) (typ) (V) | -3 |
| Noise at 0.1 Hz to 10 Hz (typ) (µVPP) | 0.8 |
| CDIP_SB (JD) | 14 | 138.9395 mm² 18.55 x 7.49 |
| PDIP (N) | 14 | 181.42 mm² 19.3 x 9.4 |
| SOIC (DW) | 16 | 106.09 mm² 10.3 x 10.3 |
| TO-CAN (LME) | 10 | 80.2816 mm² 8.96 x 8.96 |
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