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TI(德州仪器) TLV5639
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  • TI(德州仪器) TLV5639
  • TI(德州仪器) TLV5639
  • TI(德州仪器) TLV5639
  • TI(德州仪器) TLV5639
  • TI(德州仪器) TLV5639
  • TI(德州仪器) TLV5639
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TLV5639

TLV5639

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单通道 12 位并行电压输出 DAC,具有可编程内部基准、稳定时间和功耗

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The TLV5639 is a 12-bit voltage output digital-to-analog converter (DAC) with a microprocessor compatible parallel interface. It is programmed with a 16-bit data word containing 4 control and 12 data bits. Developed for a wide range of supply voltages, the TLV5639 can be operated from 2.7 V to 5.5 V.

The resistor string output voltage is buffered by a x2 gain rail-to-rail output buffer. The buffer features a ClassAB output stage to improve stability and reduce settling time. The programmable settling time of the DAC allows the designer to optimize speed versus power dissipation. Because of its ability to source up to 1 mA, the internal reference can also be used as a system reference. With its on-chip programmable precision voltage reference, the TLV5639 simplifies overall system design. The settling time and the reference voltage can be chosen by the control bits within the 16-bit data word.

Implemented with a CMOS process, the device is designed for single supply operation from 2.7 V to 5.5 V. It is available in 20-pin SOIC and TSSOP packages in standard commercial and industrial temperature ranges.

  • 12-Bit Voltage Output DAC
  • Programmable Internal Reference
  • Programmable Settling Time vs Power Consumption
    • 1 µs in Fast Mode
    • 3.5 µs in Slow Mode
  • Compatible With TMS320
  • Differential Nonlinearity...<0.5 LSB Typ
  • Voltage Output Range ... 2x the Reference Voltage
  • Monotonic Over Temperature
  • APPLICATIONS
    • Digital Servo Control Loops
    • Digital Offset and Gain Adjustment
    • Industrial Process Control
    • Machine and Motion Control Devices
    • Mass Storage Devices
Resolution (Bits)12
Number of DAC channels1
Interface typeParallel
Output typeBuffered Voltage
Settling time (µs)1
Reference typeExt, Int
ArchitectureString
RatingCatalog
Output range (max) (mA/V)5.1
Output range (min) (mA/V)0
Sample/update rate (Msps)0.286
Power consumption (typ) (mW)2.7
Operating temperature range (°C)-40 to 85
SOIC (DW)20131.84 mm² 12.8 x 10.3
TSSOP (PW)2041.6 mm² 6.5 x 6.4
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