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• Controlled Baseline
  • One Assembly/Test Site, One Fabrication Site
• Extended Temperature Performance of –40°C to 125°C
• Enhanced Diminishing Manufacturing Sources (DMS) Support
• Enhanced Product Change Notification
• Qualification Pedigree
• High-Speed Low-Power LinBiCMOS™ Circuitry Designed for Signaling Rates Up to 30 Mbps
• Bus-Pin ESD Protection Exceeds 12-kV HBM
• Compatible With ANSI Standard TIA/EIA-485-A and ISO 8482:1987(E)
• Low Skew
• Designed for Multipoint Transmission on Long Bus Lines in Noisy Environments
• Low Disabled Supply Current Requirements . . . 700 µA Maximum
• Common Mode Voltage Range of –7 V to 12 V
• Thermal-Shutdown Protection
• Driver Positive and Negative Current Limiting
• Open-Circuit Fail-Safe Receiver Design
• Receiver Input Sensitivity ...±200 mV Max
• Receiver Input Hysteresis . . . 50 mV Typ
• Glitch-Free Power-Up and Power-Down Protection

Component qualification in accordance with JEDEC and industry standards to ensure reliable operation over an extended temperature range. This includes, but is not limited to, Highly Accelerated Stress Test (HAST) or biased 85/85, temperature cycle, autoclave or unbiased HAST, electromigration, bond intermetallic life, and mold compound life. Such qualification testing should not be viewed as justifying use of this component beyond specified performance and environmental limits.
Signaling rate by TIA/EIA-485-A definition restrict transition times to 30% of the bit length, and much higher signaling rates may be achieved without this requirement as displayed in the TYPICAL CHARACTERISTICS of this device.
LinBiCMOS and LinASIC are trademarks of Texas Instruments.