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TI(德州仪器) UCC21732
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  • TI(德州仪器) UCC21732
  • TI(德州仪器) UCC21732
  • TI(德州仪器) UCC21732
  • TI(德州仪器) UCC21732
  • TI(德州仪器) UCC21732
  • TI(德州仪器) UCC21732
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UCC21732

UCC21732

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适用于 IGBT/SiC FET 且具有 2 级关断的 5.7kVrms ±10A 单通道隔离式栅极驱动器

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The UCC21732 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 2121-V DC operating voltage with advanced protection features, best-in-class dynamic performance and robustness. UCC21732 has up to ±10-A peak source and sink current.

The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 1.5-kVRMS working voltage, 12.8-kVPK surge immunity with longer than 40 years Isolation barrier life, as well as providing low part-to-part skew , >150V/ns common mode noise immunity (CMTI).

The UCC21732 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active miller clamp, input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The isolated analog to PWM sensor can be utilized for easier temperature or voltage sensing, further increasing the drivers’ versatility and simplifying the system design effort, size and cost.

  • 5.7-kVRMS single channel isolated gate driver
  • SiC MOSFETs and IGBTs up to 2121Vpk
  • 33-V maximum output drive voltage (VDD-VEE)
  • ±10-A drive strength and split output
  • 150-V/ns minimum CMTI
  • 270-ns response time fast overcurrent protection
  • Internal 2-level turn-off when fault happens
  • Isolated analog sensor with PWM output for
    • Temperature sensing with NTC, PTC or thermal diode
    • High voltage DC-Link or phase voltage
  • Alarm FLT on over current and reset from RST/EN
  • Fast enable/disable response on RST/EN
  • Reject <40-ns noise transient and pulse on input pins
  • 12-V VDD UVLO with power good on RDY
    • VDD UVLO 12 V
  • Inputs/outputs with over/under-shoot transient voltage Immunity up to 5 V
  • 130-ns (maximum) propagation delay and 30-ns (maximum) pulse/part skew
  • SOIC-16 DW package with creepage and clearance distance > 8 mm
  • Operating junction temperature –40°C to 150°C
Number of channels1
Isolation ratingReinforced
Withstand isolation voltage (VISO) (Vrms)5700
Working isolation voltage (VIOWM) (Vrms)2121
Transient isolation voltage (VIOTM) (VPK)8000
Power switchIGBT, SiCFET
Peak output current (A)10
FeaturesActive miller clamp, Fault reporting, Integrated analog to PWM sensor, Power good, Short circuit protection, Soft turn-off, Two-level turn-off
Output VCC/VDD (max) (V)33
Output VCC/VDD (min) (V)13
Input VCC (min) (V)3
Input VCC (max) (V)5.5
Propagation delay time (µs)0.09
Input thresholdCMOS
Operating temperature range (°C)-40 to 125
RatingCatalog
Bus voltage (max) (V)800
Rise time (ns)28
Fall time (ns)24
Undervoltage lockout (typ) (V)12
SOIC (DW)16106.09 mm² 10.3 x 10.3
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