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The UCC21739-Q1 is a galvanic isolated single channel gate drivers designed for SiC MOSFETs and IGBTs up to 990-V DC operating voltage with advanced protection features, best-in-class dynamic performance and robustness. UCC21739-Q1 has up to ±10-A peak source and sink current.

The input side is isolated from the output side with SiO₂ capacitive isolation technology, supporting up to 700-kV_RMS working voltage, 6-kV_PK surge immunity basic isolation with longer than 40 years isolation barrier life, as well as providing low part-to-part skew, and >150-V/ns common mode noise immunity (CMTI).

The UCC21739-Q1 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active miller clamp, and input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The isolated analog to PWM sensor can be utilized for easier temperature or voltage sensing, further increasing the drivers’ versatility and simplifying the system design effort, size and cost.