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TI(德州仪器) UCC21320-Q1
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  • TI(德州仪器) UCC21320-Q1
  • TI(德州仪器) UCC21320-Q1
  • TI(德州仪器) UCC21320-Q1
  • TI(德州仪器) UCC21320-Q1
  • TI(德州仪器) UCC21320-Q1
  • TI(德州仪器) UCC21320-Q1
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UCC21320-Q1

UCC21320-Q1

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具有可编程死区时间且采用 DWK 封装的汽车类 3.75kVrms、4A/6A 双通道隔离式栅极驱动器

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  • 封装 | 引脚 | 尺寸

The UCC21320-Q1 is an isolated dual-channel gate drivers with 4-A source and 6-A sink peak current. It is designed to drive power MOSFETs, IGBTs, and SiC MOSFETs up to 5-MHz with best-in-class propagation delay and pulse-width distortion.

The input side is isolated from the two output drivers by a 3.75-kVRMS basic isolation barrier, with a minimum of 100-V/ns common-mode transient immunity (CMTI). Internal functional isolation between the two secondary-side drivers allows a working voltage of up to 1500 VDC.

Every driver can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver with programmable dead time (DT). A disable pin shuts down both outputs simultaneously, and allows normal operation when left open or grounded. As a fail-safe measure, primary-side logic failures force both outputs low.

Each device accepts VDD supply voltages up to 25 V. A wide input VCCI range from 3 V to 18 V makes the driver suitable for interfacing with both analog and digital controllers. All supply voltage pins have under voltage lock-out (UVLO) protection.

With all these advanced features, the UCC21320-Q1 enables high efficiency, high power density, and robustness.

  • 4-A peak source, 6-A peak sink output
  • 3-V to 18-V input VCCI range to interface with both digital and analog controllers
  • Up to 25-V VDD output drive supply
  • Switching parameters:
    • 19-ns typical propagation delay
    • 10-ns minimum pulse width
    • 5-ns maximum delay matching
    • 6-ns maximum pulse-width distortion
  • Common-mode transient immunity (CMTI) greater than 100 V/ns
  • Universal: dual low-side, dual high-side or half-bridge driver
  • Programmable overlap and dead time
  • Wide Body SOIC-14 (DWK) Package
    • 3.3mm spacing between driver channels
  • Operating temperature range –40 to +125°C
  • Surge immunity up to 12.8 kV
  • Isolation barrier life >40 years
  • TTL and CMOS compatible inputs
  • Rejects input pulses and noise transients shorter than 5 ns
  • Fast disable for power sequencing
  • Qualified for automotive applications
  • AEC-Q100 qualified with the following results
    • Device temperature grade 1
    • Device HBM ESD classification level H2
    • Device CDM ESD classification level C6
Number of channels2
Isolation ratingFunctional
Withstand isolation voltage (VISO) (Vrms)3750
Working isolation voltage (VIOWM) (Vrms)2121
Transient isolation voltage (VIOTM) (VPK)5303
Power switchIGBT, MOSFET, SiCFET
Peak output current (A)6
FeaturesDisable, Programmable dead time
Output VCC/VDD (max) (V)25
Output VCC/VDD (min) (V)9.2
Input VCC (min) (V)3
Input VCC (max) (V)18
Propagation delay time (µs)0.019
Input thresholdCMOS, TTL
Operating temperature range (°C)-40 to 125
RatingAutomotive
Bus voltage (max) (V)2121
Rise time (ns)6
Fall time (ns)19
Undervoltage lockout (typ) (V)8
SOIC (DWK)14106.09 mm² 10.3 x 10.3
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