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TI(德州仪器) SN74LVC1G38
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  • TI(德州仪器) SN74LVC1G38
  • TI(德州仪器) SN74LVC1G38
  • TI(德州仪器) SN74LVC1G38
  • TI(德州仪器) SN74LVC1G38
  • TI(德州仪器) SN74LVC1G38
  • TI(德州仪器) SN74LVC1G38
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SN74LVC1G38

SN74LVC1G38

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具有漏极开路输出的单路 2 输入、1.65V 至 5.5V 与非门

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The SN74LVC1G38 device is designed for 1.65-V to 5.5-V VCC operation.

This device is a single two-input NAND buffer gate with open-drain output. It performs the Boolean function Y = A × B or Y = A + B in positive logic.

This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry disables the outputs when the device is powered down. This inhibits current backflow into the device which prevents damage to the device.

NanoStar™ and NanoFree™ package technology is a major breakthrough in IC packaging concepts, using the die as the package.

  • Latch-up performance exceeds 100 mA Per JESD 78, Class II
  • ESD protection exceeds JESD 22
    • 2000-V Human-body model (A114-A)
    • 200-V Machine model (A115-A)
    • 1000-V Charged-device model (C101)
  • Available in the Texas Instruments
    NanoStar™ and NanoFree™ Packages
  • Supports 5-V VCC operation
  • Inputs accept voltages to 5.5 V
  • Supports down translation to VCC
  • Maximum tpd of 4.5 ns at 3.3 V
  • Low power consumption, 10-µA maximum ICC
  • ±24-mA Output drive at 3.3 V
  • Ioff Supports partial-power-down mode and back-drive protection
Technology familyLVC
Supply voltage (min) (V)1.65
Supply voltage (max) (V)5.5
Number of channels1
Inputs per channel2
IOL (max) (mA)32
IOH (max) (mA)0
Input typeStandard CMOS
Output typeOpen-drain
FeaturesOver-voltage tolerant inputs, Partial power down (Ioff), Ultra high speed (tpd <5ns)
Data rate (max) (Mbps)100
RatingCatalog
Operating temperature range (°C)-40 to 125
DSBGA (YZP)52.1875 mm² 1.75 x 1.25
SOT-23 (DBV)58.12 mm² 2.9 x 2.8
SOT-SC70 (DCK)54.2 mm² 2 x 2.1
USON (DRY)61.45 mm² 1.45 x 1
X2SON (DPW)50.64 mm² 0.8 x 0.8
X2SON (DSF)61 mm² 1 x 1
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