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TI(德州仪器) SN74HC10-EP
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  • TI(德州仪器) SN74HC10-EP
  • TI(德州仪器) SN74HC10-EP
  • TI(德州仪器) SN74HC10-EP
  • TI(德州仪器) SN74HC10-EP
  • TI(德州仪器) SN74HC10-EP
  • TI(德州仪器) SN74HC10-EP
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SN74HC10-EP

SN74HC10-EP

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Enhanced product 3-ch, 3-input, 2-V to 6-V 5.2 mA drive strength NAND gate

产品详情
  • 说明
  • 特性
  • 参数
  • 封装 | 引脚 | 尺寸

The SN74HC10 device contains three independent 3-input NAND gates. It performs the Boolean function Y = (A • B • C) or Y = A + B + C in positive logic.

  • Controlled Baseline
    • One Assembly/Test Site, One Fabrication Site
  • Extended Temperature Performance of –40°C to 125°C
  • Enhanced Diminishing Manufacturing Sources (DMS) Support
  • Enhanced Product-Change Notification
  • Qualification Pedigree
  • Wide Operating Voltage Range of 2 V to 6 V
  • Outputs Can Drive Up To 10 LSTTL Loads
  • Low Power Consumption, 20-µA Max ICC
  • Typical tpd = 9 ns
  • ±4-mA Output Drive at 5 V
  • Low Input Current of 1 µA Max

Component qualification in accordance with JEDEC and industry standards to ensure reliable operation over an extended temperature range. This includes, but is not limited to, Highly Accelerated Stress Test (HAST) or biased 85/85, temperature cycle, autoclave or unbiased HAST, electromigration, bond intermetallic life, and mold compound life. Such qualification testing should not be viewed as justifying use of this component beyond specified performance and environmental limits.

Technology familyHC
Supply voltage (min) (V)2
Supply voltage (max) (V)6
Number of channels3
Inputs per channel3
IOL (max) (mA)5.2
IOH (max) (mA)-5.2
Input typeStandard CMOS
Output typePush-Pull
FeaturesHigh speed (tpd 10- 50ns)
Data rate (max) (Mbps)28
RatingHiRel Enhanced Product
Operating temperature range (°C)-40 to 125
SOIC (D)1451.9 mm² 8.65 x 6
TSSOP (PW)1432 mm² 5 x 6.4
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