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TI(德州仪器) LF411QML-SP
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  • TI(德州仪器) LF411QML-SP
  • TI(德州仪器) LF411QML-SP
  • TI(德州仪器) LF411QML-SP
  • TI(德州仪器) LF411QML-SP
  • TI(德州仪器) LF411QML-SP
  • TI(德州仪器) LF411QML-SP
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LF411QML-SP

LF411QML-SP

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航天级、单路、30V、3MHz、低失调电压运算放大器

产品详情
  • 说明
  • 特性
  • 参数
  • 封装 | 引脚 | 尺寸

This device is a low cost, high speed, JFET input operational amplifier with very low input offset voltage and ensured input offset voltage drift. It requires low supply current yet maintains a large gain bandwidth product and fast slew rate. In addition, well matched high voltage JFET input devices provide very low input bias and offset currents. The LF411QML is pin compatible with the standard LM741 allowing designers to immediately upgrade the overall performance of existing designs.

This amplifier may be used in applications such as high speed integrators, fast D/A converters, sample and hold circuits and many other circuits requiring low input offset voltage and drift, low input bias current, high input impedance, high slew rate and wide bandwidth.

  • Available with Radiation Specification
    • ELDRS FREE 100 krad(Si)
  • Internally Trimmed Offset Voltage: 0.5 mV(Typ)
  • Input Offset Voltage Drift: 10 μV/°C
  • Low Input Bias Current: 50 pA
  • Low Input Noise Current: 0.01 pA/√Hz
  • Wide Gain Bandwidth: 3 MHz
  • High Slew Rate: 10V/μs
  • Low Supply Current: 1.8 mA
  • High Input Impedance: 1012Ω
  • Low Total Harmonic Distortion: AV = 10, RL = 10KΩ, VO = 20VP-P, BW = 20Hz - 20KHz <0.02%
  • Low 1/f Noise Corner: 50 Hz
  • Fast Settling Time to 0.01%: 2 μs

All trademarks are the property of their respective owners.

Number of channels1
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V)44
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V)10
Rail-to-railNo
GBW (typ) (MHz)3
Slew rate (typ) (V/µs)15
Vos (offset voltage at 25°C) (max) (mV)2
Iq per channel (typ) (mA)2
Vn at 1 kHz (typ) (nV√Hz)18
RatingSpace
Operating temperature range (°C)-55 to 125
Offset drift (typ) (µV/°C)10
Input bias current (max) (pA)200
CMRR (typ) (dB)100
Iout (typ) (A)0.025
ArchitectureFET
Radiation, TID (typ) (krad)100
Radiation, SEL (MeV·cm2/mg)Bipolar
Input common mode headroom (to negative supply) (typ) (V)3.5
Input common mode headroom (to positive supply) (typ) (V)0.5
Output swing headroom (to negative supply) (typ) (V)1.5
Output swing headroom (to positive supply) (typ) (V)-1.5
CFP (NAC)1062.9285 mm² 9.91 x 6.35
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