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TI(德州仪器) LMP8672
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  • TI(德州仪器) LMP8672
  • TI(德州仪器) LMP8672
  • TI(德州仪器) LMP8672
  • TI(德州仪器) LMP8672
  • TI(德州仪器) LMP8672
  • TI(德州仪器) LMP8672
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LMP8672

LMP8672

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双通道 40V 低噪声精密放大器

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The LMP8671/2/4 combines great precision, low noise and a large operating voltage range to provide a high SNR and a wide dynamic range. Its AC performance allows it to be used over a wide frequency without degradation. It is the ideal choice for applications requiring DC precision and low noise such as precision PLL filters, multi feedback and multi pole active filters, GPS receivers and precision control loop systems. The LMP8671/2/4 offers an extremely high open loop gain of 135dB, low voltage noise density (2.5nV/√Hz), and a superb linearity of 0.000009%. These characteristics drastically reduce gain error which is a challenge in accurate systems requiring higher gains such as data acquisition systems.

To ensure that the most challenging loads are driven without compromise, the LMP8671/2/4 has a high slew rate of ±20V/μs and an output current capability of ±26mA.

The LMP8671/2 family of high-voltage amplifiers are available in SOIC-8, the LMP8674 in SOIC-14.

  • Output Short Circuit Protection
  • PSRR and CMRR Exceed 110dB
  • Best in Class Linearity (135dB)

Key Specifications

  • Input Offset Voltage 0.4mV
  • TC VOS 2μV/°C (max)
  • Power Supply Voltage Range ±2.5V to ±20V
  • Voltage Noise Density 2.5nV/√Hz
  • Slew Rate ±20V/μs
  • Gain Bandwidth Product 55MHz
  • Open Loop Gain 135dB
  • Input Bias Current 10nA

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ArchitectureVoltage FB
Number of channels2
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V)5
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V)44
GBW (typ) (MHz)55
BW at Acl (MHz)55
Acl, min spec gain (V/V)1
Slew rate (typ) (V/µs)20
Vn at flatband (typ) (nV√Hz)2.5
Vn at 1 kHz (typ) (nV√Hz)2.5
Iq per channel (typ) (mA)6.25
Vos (offset voltage at 25°C) (max) (mV)0.4
Rail-to-railNo
RatingCatalog
Operating temperature range (°C)-40 to 125
CMRR (typ) (dB)115
Input bias current (max) (pA)200000
Offset drift (typ) (µV/°C)0.1
Iout (typ) (mA)42
SOIC (D)829.4 mm² 4.9 x 6
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