| Number of channels | 4 |
| Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) | 36 |
| Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) | 2.7 |
| Rail-to-rail | In to V-, Out |
| GBW (typ) (MHz) | 3 |
| Slew rate (typ) (V/µs) | 1.5 |
| Vos (offset voltage at 25°C) (max) (mV) | 1.8 |
| Iq per channel (typ) (mA) | 0.475 |
| Vn at 1 kHz (typ) (nV√Hz) | 14 |
| Rating | Catalog |
| Operating temperature range (°C) | -40 to 125 |
| Offset drift (typ) (µV/°C) | 0.3 |
| Features | EMI Hardened |
| Input bias current (max) (pA) | 15 |
| CMRR (typ) (dB) | 120 |
| Iout (typ) (A) | 0.025 |
| Architecture | CMOS |
| Input common mode headroom (to negative supply) (typ) (V) | -0.1 |
| Input common mode headroom (to positive supply) (typ) (V) | -2 |
| Output swing headroom (to negative supply) (typ) (V) | 0.03 |
| Output swing headroom (to positive supply) (typ) (V) | -0.35 |
| SOIC (D) | 14 | 51.9 mm² 8.65 x 6 |
| TSSOP (PW) | 14 | 32 mm² 5 x 6.4 |
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