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TI(德州仪器) RC4580-Q1
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  • TI(德州仪器) RC4580-Q1
  • TI(德州仪器) RC4580-Q1
  • TI(德州仪器) RC4580-Q1
  • TI(德州仪器) RC4580-Q1
  • TI(德州仪器) RC4580-Q1
  • TI(德州仪器) RC4580-Q1
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RC4580-Q1

RC4580-Q1

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汽车级、双通道、32V、12MHz、低噪声 (6.5nV/√Hz) 运算放大器

产品详情
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  • 封装 | 引脚 | 尺寸

The RC4580-Q1 device is a dual operational amplifier that is designed optimally for audio applications, such as improving tone control. It offers low noise, high gain bandwidth, low harmonic distortion, and high output current. All of these features make the device ideally suited for audio electronics, such as audio preamplifiers and active filters, as well as industrial measurement equipment. When high output current is required, the RC4580-Q1 device can be used as a headphone amplifier. Due to its wide operating supply voltage, the RC4580-Q1 device can also be used in low-voltage applications.

  • Qualified for Automotive Applications
  • AEC-Q100 Qualified With the Following Results:
    • Device Temperature Grade 1: –40°C to 125°C
      Ambient Operating Temperature Range
    • Device HBM ESD Classification Level H2
    • Device CDM ESD Classification Level C3B
  • Operating Voltage . . . ±2 V to ±18 V
  • Low Noise Voltage . . . 0.8 µVrms (TYP)
  • Wide GBW . . . 12 MHz (TYP)
  • Low THD . . . 0.0005% (TYP)
  • Slew Rate . . . 5 V/µs (TYP)
  • Suitable for Automotive Applications Such As Audio Preamplifier, Active Filter, Headphone Amplifier,
    Industrial Measurement Equipment
  • Drop-In Replacement for NJM4580
  • Pin and Function Compatible With LM833, NE5532, NJM4558/9,
    and NJM4560/2/5

Number of channels2
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V)4
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V)32
GBW (typ) (MHz)12
Slew rate (typ) (V/µs)5
Rail-to-railNo
Vos (offset voltage at 25°C) (max) (mV)3
Iq per channel (typ) (mA)1.5
Vn at 1 kHz (typ) (nV√Hz)6.5
FeaturesStandard Amps
THD + N at 1 kHz (typ) (%)0.0005
RatingAutomotive
Operating temperature range (°C)-40 to 125
Iout (typ) (A)0.01
ArchitectureBipolar
CMRR (typ) (dB)110
Input bias current (max) (pA)500000
SOIC (D)829.4 mm² 4.9 x 6
TSSOP (PW)819.2 mm² 3 x 6.4
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