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TI(德州仪器) INA129-EP
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  • TI(德州仪器) INA129-EP
  • TI(德州仪器) INA129-EP
  • TI(德州仪器) INA129-EP
  • TI(德州仪器) INA129-EP
  • TI(德州仪器) INA129-EP
  • TI(德州仪器) INA129-EP
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INA129-EP

INA129-EP

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精密低功耗仪表放大器(增强型产品)

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  • 封装 | 引脚 | 尺寸

The INA129-EP device is a low power, general-purpose instrumentation amplifier offering excellent accuracy. The versatile 3-op amp design and small size make the device ideal for a wide range of applications. Current-feedback input circuitry provides wide bandwidth even at high gain (200 kHz at G = 100).

A single external resistor sets any gain from 1 to 10,000. The INA129-EP provides an industry-standard gain equation; the INA129-EP gain equation is compatible with the AD620.

The INA129-EP device is laser trimmed for very low offset voltage, drift, and high common-mode rejection (113 dB at G ≥ 100). It operates with power supplies as low as ±2.25 V, and quiescent current is only 750 µA–ideal for battery operated systems. Internal input protection can withstand up to ±40 V without damage.

The INA129-EP is available in a 8-Pin SOIC surface-mount package specified for the –55°C to 125°C temperature range.

  • Low Offset Voltage
  • Low Input Bias Current
  • High CMR: 95 dB (Typical)
  • Inputs Protected to ±40 V
  • Wide Supply Range: ±2.25 V to ±18 V
  • Low Quiescent Current: 2 mA (Typical)
  • APPLICATIONS
    • Bridge Amplifier
    • Thermocouple Amplifier
    • RTD Sensor Amplifier
    • Medical Instrumentation
    • Data Acquisition
    • Supports Extreme Temperature Applications:
      • Controlled Baseline
      • One Assembly and Test Site
      • One Fabrication Site
      • Available in Military (–55°C to +125°C)
        Temperature Range(1)
      • Extended Product Life Cycle
      • Extended Product-Change Notification
      • Product Traceability

(1) Custom temperature ranges available
All other trademarks are the property of their respective owners

Number of channels1
Vs (max) (V)36
Vs (min) (V)4.5
Input offset (±) (max) (µV)100
Voltage gain (min) (V/V)1
Voltage gain (max) (V/V)10000
Noise at 1 kHz (typ) (nV√Hz)8
FeaturesCurrent Feedback, Overvoltage protection
CMRR (min) (dB)113
Input offset drift (±) (max) (V/°C)0.00015
Input bias current (±) (max) (nA)8
Iq (typ) (mA)0.7
Bandwidth at min gain (typ) (MHz)1.3
Gain error (±) (max) (%)0.65
Operating temperature range (°C)-55 to 125
RatingHiRel Enhanced Product
TypeResistor
Gain nonlinearity (±) (max) (%)0.0055
Output swing headroom (to negative supply) (typ) (V)0.8
Output swing headroom (to positive supply) (typ) (V)-0.9
Input common mode headroom (to negative supply) (typ) (V)1.7
Input common mode headroom (to positive supply) (typ) (V)-1.4
Noise at 0.1 Hz to 10 Hz (typ) (µVPP)0.2
SOIC (D)829.4 mm² 4.9 x 6
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