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TI(德州仪器) INA148-Q1
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  • TI(德州仪器) INA148-Q1
  • TI(德州仪器) INA148-Q1
  • TI(德州仪器) INA148-Q1
  • TI(德州仪器) INA148-Q1
  • TI(德州仪器) INA148-Q1
  • TI(德州仪器) INA148-Q1
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INA148-Q1

INA148-Q1

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汽车类 +-200V 共模电压差分放大器

产品详情
  • 说明
  • 特性
  • 参数
  • 封装 | 引脚 | 尺寸

The INA148-Q1 is a precision, low-power, unity-gain difference amplifier with a high common-mode input voltage range. The device consists of a monolithic, precision, bipolar operational amplifier with a thin-film resistor network.

The on-chip resistors are laser trimmed for an accurate 1-V/V differential gain and high common-mode rejection. Excellent temperature tracking of the resistor network maintains high gain accuracy and common-mode rejection over temperature. The INA148-Q1 operates on single or dual supplies. These features make the INA148-Q1 suitable for HEV/EV and Powertrain applications, specifically in battery management systems.

The INA148-Q1 is available in an 8-pin SOIC, surface-mount package, and is specified for operation over the temperature range of –40°C to 125°C.

  • Qualified for Automotive Applications
  • AEC-Q100 Qualified With the Following Results:
    • Device Temperature Grade 1: –40°C to 125°C
      Ambient Operating Temperature Range
    • Device HBM ESD Classification Level 1C
    • Device CDM ESD Classification Level C6
    • Device MM ESD Classification Level M2
  • High Common-Mode Voltage
    • 75 V at VS = 5 V
    • ±200 V at VS = ±15 V
  • Fixed Differential Gain = 1 V/V
  • Low Quiescent Current: 260 µA
  • Wide Supply Range
    • Single Supply: 2.7 V to 36 V
    • Dual Supplies: ±1.35 V to ±18 V
  • Low Gain Error: 0.075% (Maximum)
  • Low Nonlinearity: 0.002% (Maximum)
  • High CMR: 86 dB
  • Surface-Mount 8-pin SOIC Package
Number of channels1
Vs (min) (V)2.7
Vs (max) (V)36
CMRR (min) (dB)70
Common-mode input low (min) (V)-200
Common-mode input high (max) (V)200
Input offset (±) (max) (V)0.005
Iq (typ) (mA)0.6
Slew rate (typ) (V/µs)1
Voltage gain (min) (V/V)1
Voltage gain (max) (V/V)1
Small-signal bandwidth (typ) (Hz)100000
RatingAutomotive
Operating temperature range (°C)-40 to 125
Gain drift (max) (ppm/°C)3
Gain error (±) (max) (%)0.076
SOIC (D)829.4 mm² 4.9 x 6
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