The OPA659 combines a very wideband, unity-gain stable, voltage-feedback operational amplifier with a JFET-input stage to offer an ultra-high dynamic range amplifier for high impedance buffering in data acquisition applications such as oscilloscope front-end amplifiers and machine vision applications such as photodiode transimpedance amplifiers used in wafer inspection.
The wide 650-MHz unity-gain bandwidth is complemented by a very high 2550-V/µs slew rate.
The high input impedance and low bias current provided by the JFET input are supported by the low 8.9-nV/&radic:Hz input voltage noise to achieve a very low integrated noise in wideband photodiode transimpedance applications.
Broad transimpedance bandwidths are possible with the high 350-MHz gain bandwidth product of this device.
Where lower speed with lower quiescent current is required, consider the OPA656. Where unity-gain stability is not required, consider the OPA657.
| Architecture | FET / CMOS Input, Voltage FB |
| Number of channels | 1 |
| Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) | 7 |
| Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) | 13 |
| GBW (typ) (MHz) | 350 |
| BW at Acl (MHz) | 650 |
| Acl, min spec gain (V/V) | 2 |
| Slew rate (typ) (V/µs) | 2550 |
| Vn at flatband (typ) (nV√Hz) | 8.9 |
| Vn at 1 kHz (typ) (nV√Hz) | 8.9 |
| Iq per channel (typ) (mA) | 30.5 |
| Vos (offset voltage at 25°C) (max) (mV) | 5 |
| Rail-to-rail | No |
| Rating | Catalog |
| Operating temperature range (°C) | -40 to 85 |
| CMRR (typ) (dB) | 70 |
| Input bias current (max) (pA) | 50 |
| Offset drift (typ) (µV/°C) | 10 |
| Iout (typ) (mA) | 70 |
| 2nd harmonic (dBc) | 79 |
| 3rd harmonic (dBc) | 100 |
| Frequency of harmonic distortion measurement (MHz) | 10 |
| SOT-23 (DBV) | 5 | 8.12 mm² 2.9 x 2.8 |
| VSON (DRB) | 8 | 9 mm² 3 x 3 |