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TI(德州仪器) CY74FCT823T
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  • TI(德州仪器) CY74FCT823T
  • TI(德州仪器) CY74FCT823T
  • TI(德州仪器) CY74FCT823T
  • TI(德州仪器) CY74FCT823T
  • TI(德州仪器) CY74FCT823T
  • TI(德州仪器) CY74FCT823T
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CY74FCT823T

CY74FCT823T

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具有三态输出的 9 位总线接口触发器

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  • 封装 | 引脚 | 尺寸

This bus-interface register is designed to eliminate the extra packages required to buffer existing registers and provide extra data width for wider address/data paths or buses carrying parity. The CY74FCT823T is a 9-bit-wide buffered register with clock-enable (EN) and clear (CLR) inputs that are ideal for parity bus interfacing in high-performance microprogrammed systems. It is ideal for use as an output port requiring high IOL/IOH.

This device is designed for high-capacitance load drive capability, while providing low-capacitance bus loading at both inputs and outputs. Outputs are designed for low-capacitance bus loading in the high-impedance state.

This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry disables the outputs, preventing damaging current backflow through the device when it is powered down.

  • Function, Pinout, and Drive Compatible With FCT, F Logic, and AM29823
  • Reduced VOH (Typically = 3.3 V) Version of Equivalent FCT Functions
  • Edge-Rate Control Circuitry for Significantly Improved Noise Characteristics
  • Ioff Supports Partial-Power-Down Mode Operation
  • Matched Rise and Fall Times
  • Fully Compatible With TTL Input and Output Logic Levels
  • ESD Protection Exceeds JESD 22
    • 2000-V Human-Body Model (A114-A)
    • 200-V Machine Model (A115-A)
    • 1000-V Charged-Device Model (C101)
  • 64-mA Output Sink Current
    32-mA Output Source Current
  • High-Speed Parallel Register With Positive-Edge-Triggered D-Type Flip-Flops
  • Buffered Common Clock-Enable (EN) and Asynchronous-Clear (CLR) Inputs
  • 3-State Outputs

Number of channels9
Technology familyFCT
Supply voltage (min) (V)4.75
Supply voltage (max) (V)5.25
Input typeTTL-Compatible CMOS
Output type3-State
Clock frequency (max) (MHz)100
IOL (max) (mA)64
IOH (max) (mA)-32
Supply current (max) (µA)200
FeaturesPartial power down (Ioff), Very high speed (tpd 5-10ns)
Operating temperature range (°C)-40 to 85
RatingCatalog
SOIC (DW)24159.65 mm² 15.5 x 10.3
SSOP (DBQ)2451.9 mm² 8.65 x 6
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