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TI(德州仪器) SN74LVTH541
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  • TI(德州仪器) SN74LVTH541
  • TI(德州仪器) SN74LVTH541
  • TI(德州仪器) SN74LVTH541
  • TI(德州仪器) SN74LVTH541
  • TI(德州仪器) SN74LVTH541
  • TI(德州仪器) SN74LVTH541
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SN74LVTH541

SN74LVTH541

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具有总线保持、TTL 兼容型 CMOS 输入和三态输出的 8 通道、2.7V 至 3.6V 缓冲器

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These octal buffers/drivers are designed specifically for low-voltage (3.3-V) VCC operation, but with the capability to provide a TTL interface to a 5-V system environment.

The ’LVTH541 devices are ideal for driving bus lines or buffer memory address registers. These devices feature inputs and outputs on opposite sides of the package that facilitate printed circuit board layout.

The 3-state control gate is a 2-input AND gate with active-low inputs so that if either output-enable (OE1 or OE2) input is high, all outputs are in the high-impedance state.

Active bus-hold circuitry holds unused or undriven inputs at a valid logic state. Use of pullup or pulldown resistors with the bus-hold circuitry is not recommended.

When VCC is between 0 and 1.5 V, the devices are in the high-impedance state during power up or power down. However, to ensure the high-impedance state above 1.5 V, OE should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

These devices are fully specified for hot-insertion applications using Ioff and power-up 3-state. The Ioff circuitry disables the outputs, preventing damaging current backflow through the devices when they are powered down. The power-up 3-state circuitry places the outputs in the high-impedance state during power up and power down, which prevents driver conflict.

  • Support Mixed-Mode Signal Operation (5-V Input and Output Voltages With 3.3-V VCC)
  • Typical VOLP (Output Ground Bounce)
       <0.8 V at VCC = 3.3 V, TA = 25°C
  • Support Unregulated Battery Operation Down to 2.7 V
  • Ioff and Power-Up 3-State Support Hot Insertion
  • Bus Hold on Data Inputs Eliminates the Need for External Pullup/Pulldown Resistors
  • Latch-Up Performance Exceeds 500 mA Per JESD 17
  • ESD Protection Exceeds JESD 22
    • 2000-V Human-Body Model (A114-A)
    • 200-V Machine Model (A115-A)

Technology familyLVT
Supply voltage (min) (V)2.7
Supply voltage (max) (V)3.6
Number of channels8
IOL (max) (mA)64
Supply current (max) (µA)5000
IOH (max) (mA)-32
Input typeTTL-Compatible CMOS
Output type3-State
FeaturesBus-hold, Over-voltage tolerant inputs, Partial power down (Ioff), Power up 3-state, Ultra high speed (tpd <5ns)
RatingCatalog
Operating temperature range (°C)-40 to 85
SOIC (DW)20131.84 mm² 12.8 x 10.3
SOP (NS)2098.28 mm² 12.6 x 7.8
SSOP (DB)2056.16 mm² 7.2 x 7.8
TSSOP (PW)2041.6 mm² 6.5 x 6.4
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