h1_key

TI(德州仪器) SN74ABT841A
德州仪器 (TI) 全系列产品在线购买
  • TI(德州仪器) SN74ABT841A
  • TI(德州仪器) SN74ABT841A
  • TI(德州仪器) SN74ABT841A
  • TI(德州仪器) SN74ABT841A
  • TI(德州仪器) SN74ABT841A
  • TI(德州仪器) SN74ABT841A
立即查看
您当前的位置: 首页 > 逻辑和电压转换 > 触发器、锁存器和寄存器 > D 型锁存器 > SN74ABT841A
SN74ABT841A

SN74ABT841A

正在供货

具有三态输出的 10 位总线接口 D 类锁存器

产品详情
  • 说明
  • 特性
  • 参数
  • 封装 | 引脚 | 尺寸

The SN54ABT841 and SN74ABT841A 10-bit latches are designed specifically for driving highly capacitive or relatively low-impedance loads. They are particularly suitable for implementing buffer registers, I/O ports, bidirectional bus drivers, and working registers.

The ten transparent D-type latches provide true data at their outputs.

A buffered output-enable (OE) input can be used to place the ten outputs in either a normal logic state (high or low logic levels) or a high-impedance state. In the high-impedance state, the outputs neither load nor drive the bus lines significantly. The high-impedance state and increased drive provide the capability to drive bus lines without need for interface or pullup components.

OE does not affect the internal operations of the latch. Previously stored data can be retained or new data can be entered while the outputs are in the high-impedance state.

When VCC is between 0 and 2.1 V, the device is in the high-impedance state during power up or power down. However, to ensure the high-impedance state above 2.1 V, OE should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

The SN54ABT841 is characterized for operation over the full military temperature range of -55°C to 125°C. The SN74ABT841A is characterized for operation from -40°C to 85°C.

  • State-of-the-Art EPIC-II BTM BiCMOS Design Significantly Reduces Power Dissipation
  • ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)
  • Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17
  • Typical VOLP (Output Ground Bounce) < 1 V at VCC = 5 V, TA = 25°C
  • High-Impedance State During Power Up and Power Down
  • High-Drive Outputs (-32-mA IOH, 64-mA IOL)
  • Package Options Include Plastic Small-Outline (DW), Shrink Small-Outline (DB), and Thin Shrink Small-Outline (PW) Packages, Ceramic Chip Carriers (FK), Ceramic Flat (W) Package, and Plastic (NT) and Ceramic (JT) DIPs

EPIC-IIB is a trademark of Texas Instruments Incorporated.

Number of channels10
Technology familyABT
Supply voltage (min) (V)4.5
Supply voltage (max) (V)5.5
Input typeTTL-Compatible CMOS
Output type3-State
Clock frequency (max) (MHz)150
IOL (max) (mA)64
IOH (max) (mA)-32
Supply current (max) (µA)38000
FeaturesFlow-through pinout, Partial power down (Ioff), Power up 3-state, Very high speed (tpd 5-10ns)
Operating temperature range (°C)-40 to 85
RatingCatalog
SOIC (DW)24159.65 mm² 15.5 x 10.3
SSOP (DB)2463.96 mm² 8.2 x 7.8
TSSOP (PW)2449.92 mm² 7.8 x 6.4
产品购买
  • 商品型号
  • 封装
  • 工作温度
  • 包装
  • 价格
  • 现货库存
  • 操作
10s
温馨提示:
订单商品问题请移至我的售后服务提交售后申请,其他需投诉问题可移至我的投诉提交,我们将在第一时间给您答复
返回顶部