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TI(德州仪器) LMV854
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  • TI(德州仪器) LMV854
  • TI(德州仪器) LMV854
  • TI(德州仪器) LMV854
  • TI(德州仪器) LMV854
  • TI(德州仪器) LMV854
  • TI(德州仪器) LMV854
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LMV854

LMV854

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四路、5.5V、8MHz、62mA 输出电流、低噪声 (11nV/√Hz) 运算放大器

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Texas Instrument’s LMV851/LMV852/LMV854 are CMOS input, low power op amp ICs, providing a low input bias current, a wide temperature range of −40°C to +125°C and exceptional performance, making them robust general purpose parts. Additionally, the LMV851/LMV852/LMV854 are EMI hardened to minimize any interference so they are ideal for EMI sensitive applications. The unity gain stable LMV851/LMV852/LMV854 feature 8 MHz of bandwidth while consuming only 0.4 mA of current per channel. These parts also maintain stability for capacitive loads as large as 200 pF. The LMV851/LMV852/LMV854 provide superior performance and economy in terms of power and space usage. This family of parts has a maximum input offset voltage of 1 mV, a rail-to-rail output stage and an input common-mode voltage range that includes ground. Over an operating supply range from 2.7V to 5.5V the LMV851/LMV852/LMV854 provide a CMRR of 92 dB, and a PSRR of 93 dB. The LMV851/LMV852/LMV854 are offered in the space saving 5-Pin SC70 package, the 8-Pin VSSOP and the 14-Pin TSSOP package.

  • Unless Otherwise Noted, Typical Values
    at TA = 25°C, VSUPPLY = 3.3V
  • Supply Voltage 2.7V to 5.5V
  • Supply Current (Per Channel) 0.4 mA
  • Input Offset Voltage 1 mV max
  • Input Bias Current 0.1 pA
  • GBW 8 MHz
  • EMIRR at 1.8 GHz 87 dB
  • Input Noise Voltage at 1 kHz 11 nV/√Hz
  • Slew Rate 4.5 V/µs
  • Output Voltage Swing Rail-to-Rail
  • Output Current Drive 30 mA
  • Operating Ambient Temperature Range −40°C to 125°C

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Number of channels4
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V)5.5
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V)2.7
Rail-to-railIn to V-, Out
GBW (typ) (MHz)8
Slew rate (typ) (V/µs)4.5
Vos (offset voltage at 25°C) (max) (mV)1
Iq per channel (typ) (mA)0.3975
Vn at 1 kHz (typ) (nV√Hz)11
RatingCatalog
Operating temperature range (°C)-40 to 125
Offset drift (typ) (µV/°C)0.4
FeaturesEMI Hardened
Input bias current (max) (pA)10
CMRR (typ) (dB)94
Iout (typ) (A)0.062
ArchitectureCMOS
Input common mode headroom (to negative supply) (typ) (V)-0.2
Input common mode headroom (to positive supply) (typ) (V)-1.2
Output swing headroom (to negative supply) (typ) (V)0.007
Output swing headroom (to positive supply) (typ) (V)-0.07
TSSOP (PW)1432 mm² 5 x 6.4
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