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特性
- Wideband, internally matched, RF power amplifier
- DC-coupled input and output
- Integrated RF power detector
- Integrated temperature sensor
- Gain: 13 dB typical at 8 GHz to 16 GHz
- OP1dB: 32.5 dBm typical at 8 GHz to 16 GHz
- PSAT: 33.5 dBm typical at 8 GHz to 16 GHz
- OIP3: 43.5 dBm typical at 8 GHz to 16 GHz
产品详情和应用
The ADPA9007-2CHIP is a 2 W, RF power amplifier that operates from DC to 28 GHz. The RF input and output are internally matched and DC-coupled. The ADPA9007-2CHIP includes an integrated temperature-compensated RF power detector and an integrated temperature sensor.
The ADPA9007-2CHIP amplifier provides a gain of 13 dB, an output power for 1 dB compression (OP1dB) of 32.5 dBm, and an output third-order intercept (OIP3) of 43.5 dBm from 8 GHz to 16 GHz. The amplifier operates from a typical supply voltage (VDD) of 15 V and has a 500 mA typical quiescent drain current (IDQ), which is adjustable.
The ADPA9007-2CHIP is fabricated on a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT) process and is specified for operation from −55°C to +85°C.
APPLICATIONS
- Electronic warfare
- Radar
- Test and measurement equipment
