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预发布
特性
- Usable frequency range: 1 GHz to 90 GHz
- Low insertion loss
- 1.2 dB typical to 40 GHz
- 1.7 dB typical to 67 GHz
- 3.0 dB typical to 90 GHz
- High Isolation
- 40 dB typical up to 40 GHz
- 40 dB typical up to 67 GHz
- 30 dB typical up to 81 GHz
- High input linearity
- P0.1dB: 24 dBm typical
- IP3: 45 dBm typical
- High RF input power handling
- Through path: 24 dBm
- Hot switching: 21 dBm
- No low frequency spurs
- CMOS/LVTTL compatible
- Fast RF switching time: 15 ns
- RF settling time (50% VCTRL to 0.1 dB of final RF output): 35 ns
- Single-supply operation capability (VDD = 3.3 V , VSS = 0 V)
- 30-ball, 1.56 mm × 2.04 mm, bumped, bare die sales
产品详情和应用
The ADRF5420 is a reflective, single-pole double-throw (SPDT) switch manufactured in the silicon process. This switch operates from 1 GHz to 90 GHz with better than 3.0 dB of insertion loss and 30 dB of isolation. The ADRF5420 has an RF input power handling capability of 24 dBm for the through path and 21 dBm for hot switching.
The ADRF5420 draws a low current of 130 μA on the positive supply of +3.3 V and 490 μA on negative supply of −3.3 V. The device employs complementary metal-oxide semiconductor (CMOS)-/low voltage transistor to transistor logic (LVTTL)-compatible controls.
The ADRF5420 can also operate with a single positive supply voltage (VDD) applied while the negative supply voltage (VSS) is tied to ground. In this operating condition, the small signal performance is maintained while the switching characteristics, linearity, and power handling performance is derated. See Table 2 in the data sheet for more details.
The ADRF5420 RF ports are designed to match a characteristic impedance of 50 Ω. The ADRF5420 is a 30-ball, 1.56 mm x 2.04 mm, bumped bare die sales and can operate between −40°C to +105°C.
APPLICATIONS
