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特性
ADH8191S (Die)
- Passive, Wideband, I/Q Mixer
- RF and LO Frequency Range: 6 GHz to 26.5 GHz
- Wide IF Frequency Range: DC to 5 GHz
- Single-ended RF, LO, and IF
- Conversion Loss: 9.6 dB Typ
- Image Rejection: 29.5 dBc Typ
- Single Sideband Noise Figure: 12 dB Typ
- Input IP3: 22 dBm Typ
- Input P1dB: 15 dBm Typ as Downconverter
- Input IP2: 54 dBm Typ
- LO to RF Isolation: 43.5 dB Typ
- LO to IF Isolation: 42 dB Typ
- RF to IF Isolation: 22 dB Typ
- Amplitude Balance: 0.8° Typ
- RF Return Loss: 12 dB Typ
- LO Return Loss: 22.5 dB Typ
- IF Return Loss: 15.5 dB Typ
- Screened in accordance with MIL-PRF-38534, Class K
ADH8191S (LH5 Package)
- Passive I/Q Mixer
- RF and LO Frequency Range: 8.4 GHz to 12 GHz
- Single-ended, RF, LO, and IF
- Conversion Loss: 10.5 dB Typ
- Image Rejection: 28 dB Typ
- LO to RF Isolation: 41 dB Typ
- 12-Lead Hermetic SMT Package
- Screened in accordance with MIL-PRF-38535, Class Level S
产品详情和应用
ADH8191S (Die and LH5)
The ADH8191S is a passive, wideband, in phase and quadrature (I/Q), monolithic microwave integrated circuit (MMIC) mixer that can be used either as an image rejection mixer for receiver operations or as a single sideband upconverter for transmitter operations. With an RF and local oscillator (LO) range of 6 GHz to 26.5 GHz (Die) and 8.4 GHz to 12 GHz (LH5), and an intermediate frequency (IF) bandwidth of DC to 5 GHz, the ADH8191S is ideal for applications requiring a wide frequency range, excellent RF performance, a simple design with fewer components, and a small, printed circuit board (PCB) footprint. A single ADH8191S can replace multiple narrow-band mixers in a design. The inherent I/Q architecture of the ADH8191S offers excellent image rejection of 29.5 dBc typical, eliminating the need for expensive filtering for unwanted sidebands. The mixer provides excellent LO to RF isolation of 43.5 dB typical, and LO to IF isolation of 42 dB typical. The mixer also reduces the effect of LO leakage to ensure signal integrity. As a passive mixer, the ADH8191S does not require any dc power sources. The device offers a lower noise figure compared to an active mixer, ensuring optimal dynamic range for high performance and precision applications. The ADH8191S is fabricated on a gallium arsenide (GaAs), metal semiconductor field effect transistor (MESFET) process and uses Analog Devices, Inc., mixer cells and a 90° hybrid.
Applications
- Instrumentation
- Communications
- Military & Space
