特性
- Triple Output:
- Fo = 9 GHz – 11 GHz
- Fo/2 = 4.5 GHz – 5.5 GHz
- Fo/4: = 2.25 GHz – 2.75 GHz
- Pout: + 11 dBm Typ.
- Phase Noise: -110 dBc/Hz @ 100 kHz Typ.
- No External Resonator Needed
- Die Size: 2.9 mm x 1.8 mm x 0.1 mm
- Screened in accordance with MIL-PRF-38534, Class K
产品详情和应用
The ADH530S is a GaAs, InGaP, Heterojunction Bipolar Transistor (HBT), MMIC, VCO. The ADH530S integrates resonators, negative resistance devices, varactor diodes and feature half frequency and divide-by-4 outputs. The VCO’s phase noise performance is excellent over temperature, shock, and process due to the oscillator’s monolithic structure. Power output is +11 dBm typical from a +5 V supply voltage. The prescaler and RFout/2 functions can be disabled to conserve current if not required. The voltage-controlled oscillator requires no external matching components.
Applications
- Satellite Communication (SATCOM)
- Point-to-Point/Multi-Point Radios
- Industrial Controls
- Military & Space



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