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量产
说明
- 2.3 A peak output current (<2 Ω RDSON_x)
- 2.5 V to 6.5 V VDD1 input
- 4.5V to 35 V VDD2 output
- UVLO at 2.3 V VDD1
- Multiple UVLO options on VDD2
- Grade A—4.4 V (typical) positive going threshold
- Grade B—7.3 V (typical) positive going threshold
- Grade C—11.3 V (typical) positive going threshold
- Precise timing characteristics
- 79 ns maximum isolator and driver propagation delay falling edge (ADuM4120)
- CMOS input logic levels
- High common-mode transient immunity: 150 kV/μs
- High junction temperature operation: 125°C
- Default low output
- Safety and regulatory approvals (pending)
- UL recognition per UL 1577
- 5 kV rms for 1 minute SOIC long package
- CSA Component Acceptance Notice 5A
- VDE certificate of conformity (pending)
- DIN V VDE V 0884-10 (VDE V 0884-10):2006-12
- VIORM = 849 V peak
- UL recognition per UL 1577
- 8 mm creepage
- Wide body, 6-lead SOIC with increased creepage
特性
The ADuM4120/ADuM4120-1 are 2 A isolated, single-channel drivers that employ Analog Devices, Inc., iCoupler® technology to provide precision isolation. The ADuM4120/ADuM4120-1provide 5 kV rms isolation in the 6-lead wide body SOIC package with increased creepage. Combining high speed CMOS and monolithic transformer technology, these isolation components provide outstanding performance characteristics, such as the combination of pulse transformers and gate drivers.
The ADuM4120/ADuM4120-1 operate with input supplies ranging from 2.5 V to 6.5 V, providing compatibility with lowervoltage systems. In comparison to gate drivers employing high voltage level translation methodologies, the ADuM4120/ADuM4120-1 offer the benefit of true, galvanic isolation betweenthe input and the output.
Options exist for models with and without an input glitch filter. The glitch filter helps reduce the chance of noise on the input pintriggering an output.
As a result, the ADuM4120/ADuM4120-1 provide reliable control over the switching characteristics of insulated gatebipolar transistor (IGBT)/metal-oxide semiconductor field effect transistor (MOSFET) configurations over a wide range of switching voltages.
Applications
- Switching power supplies
- IGBT/MOSFET gate drivers
- Industrial inverters
- Gallium nitride (GaN)/silicon carbide (SiC) power devices
参数
类型 | 描述 |
医疗健康 | 治疗设备 |
通信 | 无线基础设施 |
电能 | 风轮机 |
工业自动化技术 (IAT) | 现场仪器仪表 |
仪器仪表和测量 | 高温 |
航空航天和防务 | 航空电子产品和解决方案 |
