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预发布
说明
- Ultrawideband frequency range: 1 MHz to 30 GHz
- Attenuation range: 16 dB typical
- Low insertion loss
- 0.6 dB at 8 GHz
- 0.8 dB at 18 GHz
- 1.15 dB at 30 GHz
- Attenuation accuracy
- ±0.15 dB typical up to 18 GHz
- ±0.20 dB typical 18 GHz up to 30 GHz
- High input linearity
- P0.1dB insertion loss state: 33 dBm typical
- P0.1dB 16 dB attenuation state: 30 dBm typical
- IP3 insertion loss state: 51 dBm typical
- IP3 16 dB attenuation state: 49 dBm typical
- High RF power handling
- Input at ATTIN and ATTOUT
- 30 dBm typical steady state average
- 33 dBm typical steady state peak
- Input at ATTIN and ATTOUT
- RF amplitude settling time (0.1 dB of final RFOUT): 6.5 μs typical
- Single-supply operation supported
- Tight in relative phase
- No low frequency spurious signals
- CMOS-/LVTTL-compatible
- 12-terminal, 2.25 mm x 2.25 mm, land grid array [LGA] package
特性
The ADRF5715 is a silicon, 1-bit digital attenuator with 16 dBattenuation.
The ADRF5715 operates from 1 MHz to 30 GHz with better than1.15 dB of insertion loss and excellent attenuation accuracy. TheATTIN and ATTOUT port of the ADRF5715 have an RF powerhandling capability of 30 dBm steady state average and 33 dBmsteady state peak.
The ADRF5715 requires a dual-supply voltage of +3.3 V and −3.3V. The device features complementary metal-oxide semiconductor(CMOS)-/low voltage transistor to transistor logic (LVTTL)-compatiblecontrols.
The ADRF5715 can also operate with a single positive supplyvoltage (VDD) applied while the negative supply voltage (VSS) is tiedto ground. See the Theory of Operation section for more details.
The ADRF5715 RF ports are designed to match a characteristicimpedance of 50 Ω. The ADRF5715 comes in a 12-terminal, 2.25mm × 2.25 mm, RoHS-compliant, LGA package and operates from−40°C to +105°C.
APPLICATIONS
