说明
- Ultrawideband frequency range: 0.1 GHz to 30 GHz
- Attenuation range: 16 dB steps to 48 dB
- Low insertion loss
- 2.1 dB at 18 GHz
- 2.9 dB at 30 GHz
- Attenuation accuracy
- ± (0.10 + 1.8 % of attenuation state) dB typical up to 18 GHz
- ± (0.50 + 2.8 % of attenuation state) dB typical up to 30 GHz
- Typical step error
- ± 1.0 dB typical up to 18 GHz
- ± 1.5 dB typical up to 30 GHz
- High input linearity
- P0.1dB insertion loss state: 30 dBm
- P0.1dB other attenuation states: 30 dBm
- IIP3 : 50 dBm typical
- High RF power handling
- 30 dBm average
- 33 dBm peak
- RF amplitude settling time (0.1 dB of final RFOUT): 130 ns
- Single-supply operation supported
- Tight distribution in relative phase
- No low frequency spurious signals
- Parallel mode control, CMOS-/LVTTL-compatible
- 20-terminal, 3 mm × 3 mm, land grid array [LGA]
特性
The ADRF5716 is a silicon, 2-bit digital attenuator with 48 dBattenuation control range in 16 dB steps supporting glitch-freeoperation.
This device operates from 100 MHz to 30 GHz with better than 2.9dB of insertion loss and better than 1.5 dB attenuation accuracy.The ATTIN port of the ADRF5716 has a RF input power handlingcapability of 30 dBm average and 33 dBm peak for all states.
The ADRF5716 requires a dual-supply voltage of +3.3 V and −3.3V. The device features parallel mode control, and complementarymetal-oxide semiconductor (CMOS)-/low voltage transistor to transistorlogic (LVTTL)-compatible controls.
The ADRF5716 can also operate with a single positive supplyvoltage (VDD) applied, and the negative supply voltage (VSS) is tiedto ground. See the Theory of Operation section in the data sheet for more details.
The ADRF5716 RF ports are designed to match a characteristicimpedance of 50 Ω. The ADRF5716 comes in a 20-terminal, 3mm × 3 mm, RoHS compliant, land grid array [LGA] package andoperates from −40°C to +105°C.
APPLICATIONS



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