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说明
- Ultra-wideband frequency range: 100 MHz to 45 GHz
- Nonreflective design
- Low insertion loss
- 1.2 dB typical to 18 GHz
- 1.9 dB typical to 40 GHz
- 2.3 dB typical to 45 GHz
- High Isolation: 43 dB typical to 45 GHz
- High input linearity
- 0.1 dB power compression (P0.1dB): 31 dBm
- Third-order intercept (IP3): 55 dBm
- High power handling at TCASE = 85°C
- 30 dBm through path
- 24 dBm terminated path
- 30 dBm hot switching (RFC port)
- RF settling time (0.1 dB final RF output): 30 ns
- No low-frequency spurious signals
- All off-state control
- Positive control interface: CMOS-/LVTTL-compatible
- 20-terminal, 3.0 mm × 3.0 mm LGA package
- Pin-compatible with ADRF5023, low-frequency cutoff version
特性
The ADRF5022 is a nonreflective, single-pole double-throw (SPDT)switch manufactured in the silicon process.
The ADRF5022 operates from 100 MHz to 45 GHz with a typicalinsertion loss of 2.3 dB and isolation of 43 dB. The device has anRF input-power handling capability of 30 dBm for the through path,24 dBm for the terminated path, and 30 dBm for the hot switching atthe RF common port.
The ADRF5022 requires a positive supply of +3.3 V and a negativesupply of −3.3 V. The device employs complementary metal-oxidesemiconductor (CMOS)-/low-voltage transistor to transistor logic(LVTTL)-compatible controls.
The ADRF5022 can also operate with a single positive supplyvoltage (VDD) applied while the negative supply voltage (VSS) isconnected to ground. In this operating condition, the small signalperformance is maintained while the switching characteristics, linearity,and power handling performance is derated. For more details,see Table 2 in the data sheet.
TheADRF5022 is pin-compatible with the ADRF5023, low-frequencycutoff version, which operates from 9 kHz to 45 GHz.
The ADRF5022 comes in a 20-terminal, 3.0 mm × 3.0 mm, RoHScompliant,land grid array (LGA) package and can operate from−40°C to +105°C.
APPLICATIONS
