特性
- Psat: + 34.5 dBm @ 26 % PAE
- High P1dB Output Power: + 34 dBm
- High Gain: 32 dBm
- High Output IP3: +43 dBm
- Supply Voltage: Vdd = +6 V @ 1400 mA
- 24-Lead 5 mm x 5 mm LFCSP package
- Screened with guidelines to NASA/EEE-INST-002, Section M4, Level 2 applications.
产品详情和应用
The ADH952AS is a four-stage GaAs, pHEMT, MMIC, Medium Power Amplifier with a temperature compensated on-chip power detector which operates between 8 GHz and 14 GHz. The amplifier provides 32 dB of gain and +34.5 dBm of saturated output power at 26% PAE from a +6 V supply. With up to +43 dBm IP3 the ADH952AS is ideal for linear applications such as point-to-point and point-to-multipoint radios or SATCOM applications demanding +34.5 dBm of efficient saturated output power. The RF I/Os are internally matched to 50 Ohms.
Applications
- Point-to-Point Radios
- Point-to-Multipoint Radios
- SATCOM
- Military & Space



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