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ADI亚德诺 ADL9006S 产品介绍
2026-03-09
0次
特性
- OP1dB: +20 dBm Typical from 2 GHz to 6 GHz
- PSAT: +20.5 dBm Typical from 2 GHz to 6 GHz
- Gain: 15.5 dB Typical from 6 GHz to 28 GHz
- Noise Figure: 2.5 dB Typical from 2 GHz to 20 GHz
- OIP3: +26 dBm Typical from 2 GHz to 6 GHz
- Supply Voltage: +5 V @ 53 mA
- 50 Ω matched Input and Output
- 32-Lead 5 mm x 5 mm LFCSP_CAV package
- Screened to ADI Commercial Space Products Program, Commercial Space High (CSH) grade.
产品详情和应用
The ADL9006S is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), low noise amplifier that operates between 2 GHz and 28 GHz. The amplifier provides 15.5 dB of gain, 2.5 dB noise figure, 26 dBm output third-order intercept (OIP3), and 20 dBm of output power for 1 dB compression (OP1dB) while requiring 53 mA from a 5 V supply. The ADL9006S is self-biased with only a single positive supply needed to achieve a supply current (IDD) of 53 mA.
The ADL9006S amplifier input and output are internally matched to 50 Ω.
Applications
- Local Oscillator Driver Amp
- Signals Intelligence
- Military & Space
