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特性
ADH903S (Die)
- Frequency of Operation: 6 GHz to 18 GHz
- Noise Figure: 1.6 dB typical
- Small Signal Gain: 19 dB typical
- Output P1dB: 16 dBm typical
- Single Supply Voltage: +3.5 V @ 90 mA typical
- Output IP3: 27 dBm typical
- 50 Ohm Matched Input/Output
- Self-biased with optional bias control for quiescent drain (IDQ) control reduction with no radio frequency (RF) applied
- Small Size: 1.364 mm x 1.114 mm x 0.10 mm
- Screened in accordance with MIL-PRF-38534, Class K
ADH903S (LH5 Package)
- Frequency of Operation: 6 GHz to 17 GHz
- Noise Figure: 1.6 dB typical
- Small Signal Gain: 19 dB typical
- Output P1dB: 16 dBm typical
- Single Supply Voltage: +3.5 V @ 90 mA typical
- 50 Ohm Matched Input/Output
- Self-biased with optional bias control for quiescent drain (IDQ) control reduction with no radio frequency (RF) applied
- Screened in accordance with MIL-PRF-38535, Class Level B
产品详情和应用
The ADH903S is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), low noise amplifier (LNA), which is self-biased with the optional bias control for IDQ reduction. It operates between 6 GHz and 18 GHz (Die) and 6 GHz to 17 GHz (LH5 Pkg). This LNA provides 19 dB of small signal gain, 1.6 dB noise figure, and an output third-order intercept (IP3) of 27 dBm (Die only), requiring only 90 mA of supply current from a 3.5 V supply. The output power for a 1 dB compression (P1dB) of 16 dBm enables the LNA to function as a local oscillator (LO) driver for balanced, I/Q, or image rejection mixers. The ADH903S also features inputs/outputs that are dc blocked and internally matched to 50 Ω for ease of integration into multichip modules (MCMs).
Applications
- Satellite Communications
- Point-to-Point Radios
- Point-to-Multipoint Radios
- Military & Space
