h1_key

产品详情

• ECC improves data reliability
• 45 ns speed enables fast memory access
• Wide voltage range supports flexible designs
• Low standby current extends battery life
• Low active current reduces power usage
• Error correction prevents data loss
• TTL I/O simplifies system integration
• Byte power-down saves power in idle
• Operates reliably in harsh environments
• Simple chip enable eases control logic

特性

• 4-Mbit (256K × 16) SRAM with ECC
• 45 ns access time
• 2.2 V–3.6 V supply voltage range
• Ultra-low standby current: 3.5 μA typ, 8.7 μA
• 15 mA typ active current at 22.22 MHz
• Embedded single-bit error correction
• TTL-compatible I/O
• Byte power-down feature
• Industrial temperature range: –40°C to 85°C
• Single chip enable operation

参数