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Infineon英飞凌 IAUCN04S7L018D 产品介绍
2026-04-14
0次
产品详情
- Highest power & current density
- High thermal capacity leadframe package
- Reduced conduction losses
- Optimized switching behavior
- Reduced form factor
- Industry standard package
- JEDEC standard PG-TDSON-8
特性
- 5x6 mm² small footprint
- 60 A high current capability
- Leading-edge OptiMOS™7 40 V
- RDS(on) from 1.94 mΩ to 5.59 mΩ
- Leadless package with Cu-clip
- High avalanche capability
参数
类型 | 描述 |
Country of Assembly (Last BE site, current, subject to change) | Malaysia |
Country of Diffusion (Last FE site, current, subject to change) | Austria, Germany |
最高 ID (@25°C) | 60 A |
最高 QG (typ @10V) | 56 nC |
QG (typ @10V) | 43 nC |
最高 RDS (on) (@10V) | 1.94 mΩ |
最高 VDS | 40 V |
VGS(th) 范围 | 1.2 V 至 1.8 V |
VGS(th) | 1.5 V |
封装 | PG-TDSON-8 |
工作温度 范围 | -55 °C 至 175 °C |
技术 | OptiMOS™7 |
推出年份 | 2026 |
极性 | N+N |
目前计划的可用性至少到 | 2038 |
系列 | Automotive MOSFET |
认证标准 | Automotive |
