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Infineon英飞凌 IAUAN04S7N010 产品介绍
2026-04-14
0次
产品详情
- High power density & efficiency
- Increased current capability
- Improved design ruggedness
- Superior switching performance
- 7x8 mm² footprint with efficient cooling
- Automotive quality product design
- High automotive quality
特性
- Very low RDS(on)
- High Avalanche capability
- High SOA ruggedness
- Fast switching times (turn on/off)
- Leadless Packages w/ Cu-Clip
- Leading thin wafer Cu-technology
- Leading 300mm in-house production
参数
类型 | 描述 |
Country of Assembly (Last BE site, current, subject to change) | Malaysia |
Country of Diffusion (Last FE site, current, subject to change) | Austria, Germany |
最高 ID (@25°C) | 180 A |
最高 QG (typ @10V) | 64 nC |
QG (typ @10V) | 49 nC |
最高 RDS (on) (@10V) | 0.98 mΩ |
最高 VDS | 40 V |
VGS(th) 范围 | 2.2 V 至 3 V |
VGS(th) | 2.6 V |
封装 | PG-HSOF-5 |
工作温度 范围 | -55 °C 至 175 °C |
技术 | OptiMOS™7 |
推出年份 | 2025 |
极性 | N |
目前计划的可用性至少到 | 2038 |
认证标准 | Automotive |
