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Infineon英飞凌 IMBG75R050M2H 产品介绍
2026-04-14
0次
产品详情
- Superior efficiency in hard switching
- Enables higher switching frequency
- Higher reliability
- Withstand bus voltages beyond 500 V
- Robustness against parasitic turn
- Unipolar driving
- Best-in-class thermal dissipation
特性
- Highly robust 750 V technology
- Best-in-class RDS(on) x Qfr
- Excellent Ron x Qoss and Ron x QG
- Low Crss/Ciss together and high Vgsth
- 100% avalanche tested
- Infineon die attach technology
- Cutting-edge top-side-cooled package
应用
电池化成和测试, Battery energy storage (BESS), 电动汽车充电, Solid-state circuit breaker (SSCB), 电信基础设施的 AC-DC 电源转换, 光伏, 服务器电源解决方案
参数
类型 | 描述 |
最高 ID (@25°C) | 34 A |
最高 RDS (on) (@ Tj = 25°C) | 65 mΩ |
RDS (on) (@ Tj = 25°C) | 50 mΩ |
最高 RthJC | 1.11 K/W |
最高 VDS | 750 V |
安装 | SMT |
封装 | D2PAK 7-pin |
工作温度 范围 | -55 °C 至 175 °C |
技术 | CoolSiC™ G2 |
极性 | N |
认证标准 | Industrial |
