h1_key

产品详情

• High system efficiency
• High power density designs
• High design robustness
• Reduced EMI filtering
• Use in hard-switching topologies

特性

• 440 V blocking voltage
• Lower FOMs compared to 650 V SiC MOSFETs
• Fast commutation proof low Q_fr body diode
• Low R_DS(on) temperature dependency
• Gate threshold voltage, V_GS(th) = 4.5 V
• Support for unipolar driving (V_GSoff=0)
• 100% avalanche tested
• Highly controllable
• Low V_off overshoot during high dV/dt operation
• .XT interconnection technology

参数