h1_key

产品详情

• Higher power density 
• Improved overall system efficiency 
• Increased system output power 
• Enhanced cooling optimization 
• Ease of system design 
• Robustness against transient overloads 
• Robustness against avalanche conditions 
• Robustness against Miller effect 
• Ease of paralleling 
• Very reliable package with high creepage

特性

• V_DSS = 1400 V at Tvj = 25°C
• R_DSon = 11 mΩ at VGS = 18 V, Tvj = 25°C
• Very low switching losses for efficiency
• Short circuit withstand time of 2 µs
• Wider max VGS range from -10 V to +25 V
• Benchmark gate threshold voltage 4.2 V
• Robustness against parasitic turn-on
• Robust body diode
• .XT interconnection technology 
• Tighter V_GS(th) parameter distribution 
• High creepage TO-247 4pin package

应用

参数