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产品详情

• Outstanding thermal performance
• Increases energy efficiency
• Higher power density
• More compact and easier designs
• Lower TCO cost or BOM cost

特性

• VDSS = 1200 V @Tvj = 25°C
• IDDC = 287 A at TC = 100°C
• RDS(on) = 3.7 mΩ @VGS = 18 V, Tvj = 25°C
• Very low switching losses
• Overload operation up to Tvj = 200°C
• Short circuit withstand time 2 µs
• Benchmark gate threshold voltage
• Robust against parasitic turn on
• Robust body diode for hard commutation
• .XT interconnection technology

应用

参数